valence-band edge

valence-band edge
край валентної зони

English-Ukrainian dictionary of microelectronics. 2013.

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Смотреть что такое "valence-band edge" в других словарях:

  • valence band edge — valentinės juostos kraštas statusas T sritis fizika atitikmenys: angl. valence band edge vok. Valenzbandkante, f rus. край валентной зоны, m pranc. bord de la bande de valence, m …   Fizikos terminų žodynas

  • bord de la bande de valence — valentinės juostos kraštas statusas T sritis fizika atitikmenys: angl. valence band edge vok. Valenzbandkante, f rus. край валентной зоны, m pranc. bord de la bande de valence, m …   Fizikos terminų žodynas

  • Direct and indirect band gaps — In semiconductor physics, the band gap of a semiconductor is always one of two types, a direct band gap or an indirect band gap. The band gap is called direct if the momentum of electrons and holes is the same in both the conduction band and the… …   Wikipedia

  • Newton Valence — Coordinates: 51°05′20″N 0°58′07″W / 51.08897°N 0.96848°W / 51.08897; 0.96848 …   Wikipedia

  • Valenzbandkante — valentinės juostos kraštas statusas T sritis fizika atitikmenys: angl. valence band edge vok. Valenzbandkante, f rus. край валентной зоны, m pranc. bord de la bande de valence, m …   Fizikos terminų žodynas

  • valentinės juostos kraštas — statusas T sritis fizika atitikmenys: angl. valence band edge vok. Valenzbandkante, f rus. край валентной зоны, m pranc. bord de la bande de valence, m …   Fizikos terminų žodynas

  • край валентной зоны — valentinės juostos kraštas statusas T sritis fizika atitikmenys: angl. valence band edge vok. Valenzbandkante, f rus. край валентной зоны, m pranc. bord de la bande de valence, m …   Fizikos terminų žodynas

  • spectroscopy — spectroscopist /spek tros keuh pist/, n. /spek tros keuh pee, spek treuh skoh pee/, n. the science that deals with the use of the spectroscope and with spectrum analysis. [1865 70; SPECTRO + SCOPY] * * * Branch of analysis devoted to identifying… …   Universalium

  • Anderson's rule — is used for the construction of energy band diagrams of the heterojunction between two semiconductor materials. It is also referred to as the electron affinity rule. Anderson s rule was first described by R. L. Anderson in 1960 (Anderson,… …   Wikipedia

  • radiation measurement — ▪ technology Introduction       technique for detecting the intensity and characteristics of ionizing radiation, such as alpha, beta, and gamma rays or neutrons, for the purpose of measurement.       The term ionizing radiation refers to those… …   Universalium

  • Indirect bandgap — In semiconductor physics, an indirect bandgap is a bandgap in which the minimum energy in the conduction band is shifted by a k vector relative to the valence band. The k vector difference represents a difference in momentum.Semiconductors that… …   Wikipedia


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